The Influence of Space-quantization Effects and Poly-gate Depletion on the Threshold Voltage, Inversion Layer and Total Gate Capacitances in Scaled Si-mosfets
نویسنده
چکیده
We investigate the influence of space-quantization effect and poly-gate depletion on the inversion layer capacitance Cinv, total gate capacitance Ctot and threshold voltage VT in scaled Si-MOSFETs. We also present an analytical expression for the total gate capacitance Ctot that uses classical charge description and takes into account the depletion of the poly-silicon gates. Our simulation results suggest that poly-gate depletion influences more the magnitude of Ctot than the quantum-mechanical charge description. For the threshold voltage VT the situation is more complicated; it is affected by both poly-gate depletion and the quantum effects in the channel.
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